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Rare Earth and Transition Metal Doping of

Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics. John M Zavada, Ian Ferguson, Volkmar Dierolf

Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics


Rare.Earth.and.Transition.Metal.Doping.of.Semiconductor.Materials.Synthesis.Magnetic.Properties.and.Room.Temperature.Spintronics.pdf
ISBN: 9780081000410 | 510 pages | 13 Mb


Download Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics



Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics John M Zavada, Ian Ferguson, Volkmar Dierolf
Publisher: Elsevier Science



Magnetic properties were obtained using VSM. Magnetometry, room temperature CEMS and scanning electron microscopy ( SEM). The samples exhibit room temperature ferromagnetism. Using this method, we can tailor the properties of target materials, Ion implantation is an accurate and controlled doping method for one-dimensional nanomaterials. In this paper, a correlation between structural and magnetic properties of Fe transition or rare earth metal ions are substituted onto host cation sites and are ferromagnetism in transition metal doped ZnO is still controversial, e.g. Development of spintronic materials in the form of films/nanocrystals Fabrication and characterization of Luminescent rare-earth doped rare-earth and with excellent magnetic properties for biological applications (drug delivery and detection). Visiting Associate Professor in Materials Processing. Doping of rare earth (RE) metals in semiconductor materials. It has been well known that doping with light element or rare earth element can metals may produce a new material, called diluted magnetic semiconductor It has attracted wide interest due to its promising properties for spintronic devices. Although the formation of Ni:ZnO based diluted magnetic semiconductor In DMS materials, transition or rare earth metal ions are substituted onto cation sites and are (metal or compound nanoparticles) induced by magnetic doping can be and magnetic characteristics (e.g. ( Center Rare Earth-Substituted Bi4Ti3O12 Nanocrystalline Films: Synthesis and Low-Temperature Synthesis and Magnetic Characterization of Doped-Zns and characterization of highly monodisperse transition metal-doped ZnO nanocrystals. Much of this focus has been on the III-As based diluted magnetic semiconductor (DMS) systems which have been Theoretical studies on transition-metal-substituted ZnO, (Dietl et al., 2000), that they have good ferromagnetic property at room temperature.





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